HM-6508

Features:

• This Circuit is Processed in Accordance to MIL-STD-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1.
• Low Power Standby . . . . . . . . . . . . . . . . . . . . 50mW Max
• Low Power Operation . . . . . . . . . . . . . 20mW/MHz Max
• Fast Access Time. . . . . . . . . . . . . . . . . . . . . . 180ns Max
• Data Retention . . . . . . . . . . . . . . . . . . . . . . . . . .2.0V Min
• TTL Compatible Input/Output
• High Output Drive - 2 TTL Loads
• On-Chip Address Register


Pinout




Specifications

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+7.0V
Input, Output or I/O Voltage . . . . . .  . . . . GND -0.3V to VCC +0.3V
Typical Derating Factor . . . . . . . . . . .1.5mA/MHz Increase in ICCOP
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1


Description

The HM-6508/883 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation.

On chip latches are provided for address allowing efficient interfacing with microprocessor systems. The data output buffers of HM-6504/883  can be forced to a high impedance state for use in expanded memory arrays.

The HM-6508/883 is a fully static RAM and may be maintained in any state for an indefinite period of time. Data retention supply voltage and supply current are guaranteed over temperature.