MOSFET DUAL ENHANCE HERMETIC SMD
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Series: | - | Manufacturer: | TT Electronics/Optek Technology |
FET Type: | N and P-Channel | FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 90V | Current - Continuous Drain (Id) @ 25° C: | 2A, 1.1A |
Rds On (Max) @ Id, Vgs: | 5 Ohm @ 1A, 10V | Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) @ Vgs: | - | Input Capacitance (Ciss) @ Vds: | 70pF @ 25V |
Package / Case : | SOT-143-4 | Power - Max: | 500mW |
Mounting Type: | Surface Mount | Package / Case: | 6-SMD, No Lead |
Supplier Device Package: | 6-SMD |
HCT802TX offers an N-Channel and PChannel MOS transistor in a hermetic ceramic surface mount package. The devices used are similar to industry standards 2N6661 N-Channel device and VP1008 P-Channel device. These two enhancement mode MOSFETS are particularly well matched for VDS, IDS(on), RDS(on) and Gfs.
Order HCT802TX for processing per MIL-PRF-19500. Typical screening and lot acceptance tests are provided on page 13-4. TX products receive a VGS HTRB at 16 V for 48 hrs. at 150° C and a VDS HTRB at 72 V for 160 hrs. at 150o.