HCT802

Transistor Polarity :
Drain-Source Breakdown Voltage :
Gate-Source Breakdown Voltage :
Continuous Drain Current :
Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Packaging :


Features:

·6 pad surface mount package
·V_DS = 90V
·R_DS(on) <5W
·I_D(on) N-Channel = 1.5A
              P-Channel = 1.1A
·Two devices selected for VDS, I_D(on) and RDS(on) similarity
·Full TX Processing Available
·Gold plated contacts


Specifications

Drain- Source Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . 90 V
Gate- Source Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20 V
Drain Cur rent (Lim ited by Tj max) N- Channel . . . . . . . . . . . . . . . . . . . . . . .. . . . 2 A
                                                       P- Channel. . . . . . . . . . . . . . . . . . .  . . . . . . 1.1 A
Operating and Stor age Tem perature . . . . . . . . . . . . . . . . . . . . .. . . -55 to +150
Power Dis sipation
T_A = 25 (Both de vices equally driven) . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 W To tal
T_S = 25 (Both de vices equally driven). . . . . . . . . . . . . . . . . . . .  . . . 1.5 W To tal(1)
(T_s = Substrate that the package is soldered to)

Notes
(1) This rating is provided as an aid to designers. It is dependent upon mounting material and methods and is not measureable as an outgoing test.


Description

HCT802 offers an N-Channel and PChannel MOS transistor in a hermetic ceramic surface mount package. The devices used are similar to industry standards 2N6661 N-Channel device and VP1008 P-Channel device. These two enhancement mode MOSFETS are particularly well matched for VDS, I_DS(on), R_DS(on) and Gfs.

Order HCT802TX for processing per MIL-PRF-19500. Typical screening and lot acceptance tests are provided on page 13-4. TX products receive a VGS HTRB at 16 V for 48 hrs. at 150° C and a VDS HTRB at 72 V for 160 hrs. at 150o.