HCT802TX

MOSFET DUAL ENHANCE HERMETIC SMD

product image

HCT802TX Picture
SeekIC No. : 003430170 Detail

HCT802TX: MOSFET DUAL ENHANCE HERMETIC SMD

floor Price/Ceiling Price

US $ 32.18~32.18 / Piece | Get Latest Price
Part Number:
HCT802TX
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~100
  • Unit Price
  • $32.18
  • Processing time
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/5/22

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: - Manufacturer: TT Electronics/Optek Technology
FET Type: N and P-Channel FET Feature: Standard
Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25° C: 2A, 1.1A
Rds On (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) @ Vgs: - Input Capacitance (Ciss) @ Vds: 70pF @ 25V
Package / Case : SOT-143-4 Power - Max: 500mW
Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead
Supplier Device Package: 6-SMD    

Description

FET Type: N and P-Channel
Mounting Type: Surface Mount
Series: -
FET Feature: Standard
Gate Charge (Qg) @ Vgs: -
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power - Max: 500mW
Package / Case: 6-SMD, No Lead
Manufacturer: TT Electronics/Optek Technology
Drain to Source Voltage (Vdss): 90V
Current - Continuous Drain (Id) @ 25° C: 2A, 1.1A
Rds On (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V
Input Capacitance (Ciss) @ Vds: 70pF @ 25V
Supplier Device Package: 6-SMD
Packaging: Bulk


Features:

·6 pad surface mount package
·VDS = 90V
·RDS(on) <5W
·ID(on) N-Channel = 1.5A
              P-Channel = 1.1A
·Two devices selected for VDS, ID(on) and RDS(on) similarity
·Full TX Processing Available
·Gold plated contacts



Specifications

Drain- Source Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . 90 V
Gate- Source Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20 V
Drain Cur rent (Lim ited by Tj max) N- Channel . . . . . . . . . . . . . . . . . . . . . . .. . . . 2 A
                                                       P- Channel. . . . . . . . . . . . . . . . . . .  . . . . . . 1.1 A
Operating and Stor age Tem perature . . . . . . . . . . . . . . . . . . . . .. . . -55 to +150
Power Dis sipation
TA = 25 (Both de vices equally driven) . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 W To tal
TS = 25 (Both de vices equally driven). . . . . . . . . . . . . . . . . . . .  . . . 1.5 W To tal(1)
(Ts = Substrate that the package is soldered to)

Notes
(1) This rating is provided as an aid to designers. It is dependent upon mounting material and methods and is not measureable as an outgoing test.



Description

HCT802TX  offers an N-Channel and PChannel MOS transistor in a hermetic ceramic surface mount package. The devices used are similar to industry standards 2N6661 N-Channel device and VP1008 P-Channel device. These two enhancement mode MOSFETS are particularly well matched for VDS, IDS(on), RDS(on) and Gfs.

Order HCT802TX for processing per MIL-PRF-19500. Typical screening and lot acceptance tests are provided on page 13-4. TX products receive a VGS HTRB at 16 V for 48 hrs. at 150° C and a VDS HTRB at 72 V for 160 hrs. at 150o.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Potentiometers, Variable Resistors
Motors, Solenoids, Driver Boards/Modules
Discrete Semiconductor Products
Cables, Wires - Management
Optoelectronics
Boxes, Enclosures, Racks
View more