DescriptionThe HB52RF649E1U-75B is one member of the HB52RF649E1U series.The HB52RF649E1U belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 8-byte processor applications. The HB52RF649E1U is a 64M x 72 x 1-bank Synchronous D...
HB52RF649E1U-75B: DescriptionThe HB52RF649E1U-75B is one member of the HB52RF649E1U series.The HB52RF649E1U belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memo...
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Features: · 144-pin Zig Zag Dual tabs socket type-Outline: 67.60 mm (Length) × 25.40 mm (Height) ×...
Features: · 144-pin Zig Zag Dual tabs socket type-Outline: 67.60 mm (Length) × 25.40 mm (Height) ×...
Features: · 168-pin socket type package (dual lead out)-Outline: 133.35 mm (Length) × 25.40 mm (He...
The HB52RF649E1U-75B is one member of the HB52RF649E1U series.The HB52RF649E1U belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 8-byte processor applications. The HB52RF649E1U is a 64M x 72 x 1-bank Synchronous Dynamic RAM Registered Module, mounted 18 pieces of 256-Mbit SDRAM (HM5225405BTB) sealed in TCP package, 1 piece of PLL clock driver, 2 pieces of register driver and 1 piece of serial EEPROM (2-kbit) for Presence Detect (PD).
Features of the HB52RF649E1U-75B are:(1)3.3 V power supply; (2)clock frequency: 133 MHz (max); (3)LVTTL interface; (4)Data bus width: x 72 ECC; (5)Single pulsed RAS; (6)4 banks can operates simultaneously and independently; (7)burst read/write operation and burst read/single write operation capability; (8)fully compatible with:JEDEC standard outline 8-byte DIMM; (9)168-pin socket type package (dual lead out).Although these pin names are the same as those of conventional DRAMS, they function in a different way. These pins define operation commands (read, write, etc.) depending on the combination of their voltage levels. For details, refer to the command operation section.
The absolute maximum ratings of the HB52RF649E1U-75B can be summarized as:(1)storage temperature range:-55 to 100;(2)voltage on any pin relative to VSS:-0.5 to Vcc+0.5V;(3)supply voltage relative to VSS:-0.5 to 4.6V;(4)operating temperature range:0 to 55;(5)short circuit output current:50mA;(6)power dissipation:8.0W.Design your application so that the product is used within the ranges guaranteed by Elpida Memory, Inc.particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Elpida Memory, Inc. bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Elpida Memory, Inc. product does not cause bodily injury,fire or other consequential damage due to operation of the Elpida Memory, Inc. product.