HB52RF328GB-B

The HB52RF328GB is a 32M x 64 x 1 banks Synchronous Dynamic RAM Micro Dual In-line Memory  Module (Micro DIMM),mounted 8 pieces of 256M bits SDRAM (HM522805BTB/BLTB) sealed in TCP package and 1 piece of serial EEPROM (2k  bits  EEPROM) for Presence Detect (PD).An outline of the products is 144-pin Zig Zag Dual tabs socket type compact and thin package.Therefore,they make high density mounting possible without surface mount technology.They provide common data inputs and outputs.Decoupling capacitors are mounted beside TCP on the module board.

Features of the HB52RF328GB are:(1)3.3V power supply; (2)clock frequency:  133MHz/100MHz (max.); (3)LVTTL interface; (4)data bus width: x 64 non parity; (5)single pulsed /RAS; (6)4 banks can operates simultaneously and independently; (7)burst read/write operation and burst read/single write operation capability; (8)programmable burst length (BL): 1£¬2, 4, 8; (9)2 variations of burst sequence; (10)programmable /CE latency (CL): 2, 3; (11)byte control by DQMB; (12)refresh cycles: 8192 refresh cycles/64ms.

The absolute maximum ratings of the HB52RF328GB can be summarized as:(1)storage temperature range:-55 to 125;(2)voltage on any pin relative to VSS:-0.5 to Vcc+0.5V;(3)supply voltage relative to VSS:-0.5 to 4.6V;(4)operating temperature range:0 to 65;(5)short circuit output current:50mA;(6)power dissipation:8.0W.Exposing the MOS devices to a strong electric field can cause destruction of the gate oxide and ultimately degrade the MOS devices operation.Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it, when once it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity.MOS devices must be stored and transported in an anti-static container,static shielding bag or conductive material.Descriptions of circuits,software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.The incorporation of these circuits, software and information in the design of the customer's equipment shall be done under the full responsibility of the customer. Elpida Memory, Inc. assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information.