HB52RD328DC-F

The HB52RD328DC-F belongs to HB52RD328DC family which is a 16M * 64 * 2 banks Synchronous Dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 32 pieces of 64-Mbit SDRAM (HM5264405FTB) sealed in TCP package and 1 piece of serial EEPROM (2-kbit EEPROM) for Presence Detect (PD). It provides common data inputs and out puts. Decoupling capacitors are mounted beside TCP on the module board. An outline of the product is 144-pin Zig Zag Dual tabs socket type compact and thin package: The refore, it make s high density mount ing possible withouts urf ace mount technology.

The features of HB52RD328DC-F can be summarized as (1)fully compatible with: JEDEC standard outline 8-byte S.O.DIMM; (2)144-pin Zig Zag Dual tabs socket type (dual lead out) outline: 67.60 mm (Length) * 31.75 mm (Height) * 3.80 mm (Thickness), lead pitch: 0.80 mm; (3)3.3 V power supply; (4)clock frequency: 100 MHz (max); (5)LVTTL interface; (6)data bus width: * 64 Non parity; (7)single pulsed RAS; (8)4 banks can operates simultaneously and independently; (9)burst read/write operation and burst read/single write operation capability; (10)programmable burst length : 1/2/4/8/full page; (11)2 variations of burst sequence sequential (BL = 1/2/4/8/full page), interleave (BL = 1/2/4/8); (12)programmable CE latency : 2/3 (HB52RD328DC-A6F/A6FL): 3 (HB52RD328DC-B6F/B6FL); (13)byte control by DQMB; (14)refresh cycles: 4096 refresh cycles/64 ms; (15)2 variations of refresh auto refresh, self refresh; (16)low self refresh current: HB52RD328DC-A6FL/B6FL (L-version); (17)full page burst length capability sequential burst, burst stop capability.

The absolute maximum ratings of HB52RD328DC-F are (1)voltage on any pin relative to VSS VT: 0.5 to V CC + 0.5 ( 4.6 (max)) V; (2)supply voltage relative to VSS VCC: 0.5 to +4.6 V; (3)short circuit output current Iout: 50 mA; (4)power dissipation PT: 4.0 W; (5)operating temperature Topr: 0 to +65 °C; (6)storage temperature Tstg: 55 to +125 °C.