HB52R649E1U-A6B

The HB52R649E1U-A6B belongs to HB52R649E1U family which is a kind of 8-byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 8-byte processor applications. The HB52R649E1U provides common data inputs and outputs. An outline of the HB52R649E1U is 168-pin socket type package (dual lead out). Therefore, the HB52R649E1U makes high density mounting possible without surface mount technology. Decoupling capacitors are mounted beside each TCP on the module board. The HB52R649E1U is a 64M * 72 * 1-bank Synchronous Dynamic RAM Registered Module, mounted 18 pieces of 256-Mbit SDRAM (HM5225405BTB) sealed in TCP package, 1 piece of pll clock driver, 2 pieces of register driver and 1 piece of serial EEPROM (2-kbit) for Presence Detect (PD).

The features of HB52R649E1U-A6B can be summarized as (1)fully compatible with : JEDEC standard outline 8-byte DIMM : Intel PCB Reference design (Rev.1.2); (2)168-pin socket type package (dual lead out); (3)outline: 133.35 mm (Length) * 30.48 mm (Height) * 4.80 mm (Thickness); (4)lead pitch: 1.27 mm; (5)3.3 V power supply; (6)clock frequency: 100 MHz (max); (7)LVTTL interface; (8)data bus width: * 72 ECC; (9)single pulsed RAS; (10)4 banks can operates simultaneously and independently; (11)burst read/write operation and burst read/single write operation capability; (12)programmable burst length: 1/2/4/8; (13)2 variations of burst sequence sequential, interleave; (14)programmable CE latency : 3/4 (HB52R649E1U-A6B) : 4 (HB52R649E1U-B6B); (15)byte control by DQMB; (16)refresh cycles: 8192 refresh cycles/64 ms; (17)2 variations of refresh - auto refresh, - self refresh.

The absolute maximum ratings of HB52R649E1U-A6B are (1)voltage on any pin relative to VSS V T: 0.5 to V CC + 0.5 ( 4.6 (max))V; (2)supply voltage relative to VSS VCC: 0.5 to +4.6 V; (3)short circuit output current Iout: 50 mA; (4)power dissipation PT: 18.0 W; (5)operating temperature Topr: 0 to +55 °C; (6)storage temperature Tstg: 50 to +100 °C.