HB52R329E22-F

The HB52R329E22-F belongs to HB52R329E22 family which is a kind of 8-byt e DIMM (DualInline Memory Module) family, and has been developed as an optimized main memorysolution for 8-byte process or applications: The HB52R329E22 is a 16M * 72 * 2-bank Synchronous Dyn Therefore, the HB52R329E22-F makes high density mounting possible without surface mount technology. The HB52R329E22 provides common data inputs and outputs. An outline of the HB52R 329E22 is 168-pin sock t type package (dual lead out ). Decoupling capacitors are mounted beside TCP on the module board.a mi c RAM Module, mounted 36 pi eces of 64-M bit S DRA M (H M5264405F TB ) sealed in TCP package and 1 piece of PLL clock driver (2510) , 3 pieces register driver (162835) , 1 piece of inverter and 1 piece of serial EEP ROM (2- kbit EEP RO M ) for Presence Detect (PD).

The features of HB52R329E22-F can be summarized as (1)fully compatible with : JEDEC standard outline registered 8-byte DIMM : Intel PCB Reference design (Rev. 1.2); (2)168-pin socket type package (dual lead out) -outline: 133.37 mm (length) * 38.10 mm (Height) * 4.80 mm (Thickness) -Lead pitch: 1.27 mm; (3)3.3 V power supply; (4)Clock frequency: 100 MHz (max); (5)LVTTL interface; (6)Data bus width: * 72 ECC; (7)Single pulsed RAS; (8)4 Banks can operates simultaneously and independently; (9)Burst read/write operation and burst read/single write operation capability; (10)Programmable burst length: 1/2/4/8/full page; (11)2 variations of burst sequence-sequential (BL = 1/2/4/8/full page)-interleave (BL = 1/2/4/8); (12)programmable CE latency : 3/4 (HB52R329E22-A6F) : 4 (HB52R329E22-B6F); (13)byte control by DQMB; (14)refresh cycles: 4096 refresh cycles/64 ms; (15)2 variations of refresh -auto refresh -self refresh; (16)full page burst length capability -sequential burst -burst stop capability.

The absolute maximum ratings of HB52R329E22-F are (1)voltage on any pin relative to V SS VT: 0.5 to VCC + 0.5 ( 4.6 (max)) V; (2)supply voltage relative to V SS VCC: 0.5 to +4.6 V 1; (3)short circuit output current Iout: 50 mA; (4)power dissipation P T: 18.0 W; (5)operating temperature Topr: 0 to +55 °C; (6)storage temperature Tstg: 50 to +100 °C.