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HB526R864ESN-10H

Features: · 168-pin socket type package (dual lead out)-Lead pitch : 1.27 mm· 3.3 V ( ±0.3 V) power supply· Clock frequency : 100 MHz / 83 MHz· JEDEC standard outline unbuffered 8-byte DIMM· LVTTL interface· Data bus width: × 64 (non parity)bit· Single pulsed RAS· 2 Banks can operate simultaneousl...

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SeekIC No. : 004358834 Detail

HB526R864ESN-10H: Features: · 168-pin socket type package (dual lead out)-Lead pitch : 1.27 mm· 3.3 V ( ±0.3 V) power supply· Clock frequency : 100 MHz / 83 MHz· JEDEC standard outline unbuffered 8-byte DIMM· LVTTL i...

HB526R864ESN-10H Data Sheet

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Part Number:
HB526R864ESN-10H
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

·  168-pin socket type package (dual lead out)
- Lead pitch : 1.27 mm
·  3.3 V ( ±0.3 V) power supply
·  Clock frequency : 100 MHz / 83 MHz
·  JEDEC standard outline unbuffered 8-byte DIMM
·  LVTTL interface
·  Data bus width: × 64 (non parity)bit
·  Single pulsed RAS·  2 Banks can operate simultaneously and independently
·  Burst read/write operation and burst read/single write operation capability
·  Programmable burst length: 1/2/4/8/full page
·  Programmable burst sequence
- Sequential/interleave
·  Full page burst length capability
- Sequential burst
-Burst stop capability
·  Programmable CAS latency: 1/2/3
·  4096 refresh cycles: 64 ms


Specifications

Parameter Symbol Value Unit
Voltage on any pin relative to VSS VT 0.5 to +4.6 V
Supply voltage relative to VSS VDD 0.5 to +4.6 V
Short circuit output current Iout 50 mA
Power dissipation PT 16 W
Operating temperature Topr 0 to +65
Storage temperature Tstg 55 to +125




Description

The HB526R864ESN belongs to 8 byte DIMM (Dual In-line Memory Module) family, and has been developed a as optimized main memory solution for 8 byte processor applications. The HB526R864ESN is a 4M × 64 × 2 banks Synchronous Dynamic RAM module, mounted 32 pieces of 16-Mbit SDRAM (HM5216405TB) sealed in TCP package and 1 piece of serial EEPROM (24C02) for Presence Detect (PD).

An outline of the HB526R864ESN is 168-pin socket type package (dual lead out). Therefore, the HB526R864ESN makes high density mounting possible without surface mount technology. It provides common data inputs and outputs. Decoupling capacitors are mounted beside each TCP on the module board.




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