HB526C272EN-10IN

Specifications Parameter Symbol Value Unit Note Voltage on any pin relative to VSS VT 0.5 to +4.6 V 1 Supply voltage relative to VSS VDD 0.5 to +4.6 V 1 Operating temperature Topr 0 to +65 Storage temperature Tstg 55 to +125 Note: 1. Respect to VSSDescriptionT...

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SeekIC No. : 004358828 Detail

HB526C272EN-10IN: Specifications Parameter Symbol Value Unit Note Voltage on any pin relative to VSS VT 0.5 to +4.6 V 1 Supply voltage relative to VSS VDD 0.5 to +4.6 V 1 Operating temperatu...

floor Price/Ceiling Price

Part Number:
HB526C272EN-10IN
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Specifications

Parameter Symbol Value Unit Note
Voltage on any pin relative to VSS VT 0.5 to +4.6 V 1
Supply voltage relative to VSS VDD 0.5 to +4.6 V 1
Operating temperature Topr 0 to +65
Storage temperature Tstg 55 to +125
Note: 1. Respect to VSS



Description

The HB526C272EN, HB526C472EN belong to 8-byte DIMM (Dual In-line Memory Module) family, and have been developed as an optimized main memory solution for 8-byte processor applications. The HB526C272EN is a 1M × 72× 2-bank Synchronous Dynamic RAM Module, mounted 9 pieces of 16-Mbit SDRAM (HM5216805TT) sealed in TSOP package and 1 piece of serial EEPROM (24C02) for Presence Detect (PD). The HB526C472EN is a 1M × 72 × 4-bank Synchronous Dynamic RAM Module, mounted 18 pieces of 16-Mbit SDRAM (HM5216805TT) sealed in TSOP package and 1 piece of serial EEPROM (24C02) for Presence Detect (PD). An outline of the HB526C272EN, HB526C472EN are 168-pin socket type package (dual lead out). Therefore, the HB526C272EN, HB526C472EN make high density mounting possible without surface mount technology. They provide common data inputs and outputs. Decoupling capacitors are mounted beside each TSOP on the module board.




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