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HAF2026RJ

Features: • Logic level operation (5 to 6 V Gate drive)• Built-in the over temperature shut-down circuit• High endurance capability against to the shut-down circuit• Latch type shut down operation (need 0 voltage recovery)• Built-in the current limitation circuitSpeci...

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SeekIC No. : 004358491 Detail

HAF2026RJ: Features: • Logic level operation (5 to 6 V Gate drive)• Built-in the over temperature shut-down circuit• High endurance capability against to the shut-down circuit• Latch ty...

HAF2026RJ Data Sheet

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Part Number:
HAF2026RJ
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Logic level operation (5 to 6 V Gate drive)
• Built-in the over temperature shut-down circuit
• High endurance capability against to the shut-down circuit
• Latch type shut down operation (need 0 voltage recovery)
• Built-in the current limitation circuit


Specifications

Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
16
V
Gate to source voltage
VGSS
-2.5
V
Drain current
ID
0.6
A
Body-drain diode reverse drain current
IDR
1
A
Avalanche current
IAP Note3
0.6
A
Avalanche energy
EAR Note3
1.54
mJ
Cannel dissipation
PchNote1
1
W
Cannel dissipation
PchNote2
1.5
W
Cannel temperature
Tch
150
Storage temperature
Tstg
55 to +150
Notes: 1. 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s
            2. 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s
            3. Tc = 25 Rg 50


Description

This HAF2026RJ FET has the over temperature shut-down capability sensing to the junction temperature. This HAF2026RJ FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..




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