Features: • Logic level operation (4 V Gate drive)• Built-in the over temperature shut-down circuit• High endurance capability against to the shut-down circuit• Latch type shut down operation (need 0 voltage recovery)Specifications Parameter Symbol Rating Unit Dr...
HAF2027(L): Features: • Logic level operation (4 V Gate drive)• Built-in the over temperature shut-down circuit• High endurance capability against to the shut-down circuit• Latch type sh...
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Parameter | Symbol | Rating | Unit |
Drain to source voltage | VDSS | 60 | V |
Gate to source voltage | VGSS | 16 | V |
Gate to source voltage | VGSS | 2.5 | |
Drain current | ID | 50 | A |
Drain peak current | ID(pulse) Note1 |
100 | A |
Body-drain diode reverse drain current | IDR | 50 | A |
Channel dissipation | Pch Note2 | 100 | W |
Channel temperature | Tch | 150 | |
Storage temperature | Tstg | -55 to +150 |
This HAF2027(L) FET has the over temperature shut-down capability sensing to the junction temperature. This HAF2027(L) FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..