Features: This FET has the over temperature shutdown capability sensing to the junction temperature.This FET has the builtin over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction temperature like applying over power con...
HAF2002: Features: This FET has the over temperature shutdown capability sensing to the junction temperature.This FET has the builtin over temperature shutdown circuit in the gate area. And this circuit oper...
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This FET has the over temperature shutdown capability sensing to the junction temperature.
This FET has the builtin over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
` Logic level operation (4 to 6 V Gate drive)
` High endurance capability against to the short circuit
` Builtin the over temperature shutdown circuit
` Latch type shutdown operation (Need 0 voltage recovery)
Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDSS |
60 |
V |
Gate to source voltage |
VGSS |
16 |
V |
Gate to source voltage |
VGSS |
-2.8 |
V |
Drain current |
ID |
20 |
A |
Drain peak current |
ID(pulse)1 |
40 |
A |
Body-drain diode reverse drain current |
IDR |
20 |
A |
Channel dissipation |
Pch2 |
30 |
W |
Channel temperature |
Tch |
150 |
°C |
Storage temperature |
Tstg |
-55to+150 |
°C |