Features: ` Logic level operation (4 to 6 V Gate drive)` High endurance capability against to the short circuit` Builtin the over temperature shutdown circuit` Latch type shutdown operation (Need 0 voltage recovery)Specifications Item Symbol Ratings Unit Drain to source voltage ...
HAF2007: Features: ` Logic level operation (4 to 6 V Gate drive)` High endurance capability against to the short circuit` Builtin the over temperature shutdown circuit` Latch type shutdown operation (Need 0 ...
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Features: • Logic level operation (4 V Gate drive)• Built-in the over temperature shut...
Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDSS |
60 |
V |
Gate to source voltage |
VGSS |
16 |
V |
Gate to source voltage |
VGSS |
-2.5 |
V |
Drain current |
ID |
5 |
A |
Drain peak current |
ID(pulse)1 |
10 |
A |
Body-drain diode reverse drain current |
IDR |
5 |
A |
Channel dissipation |
Pch2 |
20 |
W |
Channel temperature |
Tch |
150 |
°C |
Storage temperature |
Tstg |
-55to+150 |
°C |
This HAF2007 FET has the over temperature shutdown capability sensing to the junction temperature. This HAF2007 FET has the builtin over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction temperature like applying over power consumption, over current etc.