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H5N2515P

Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Item Symbol Ratings Unit Drain to Source voltage VDSS 250 V Gate to Source voltage VGSS ±30 V Drain current ID 55 A Drain peak current ID...

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SeekIC No. : 004357680 Detail

H5N2515P: Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Item Symbol Ratings Unit Drain to Source voltage VDSS 250 V Gate...

H5N2515P Data Sheet

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Part Number:
H5N2515P
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low on-resistance
• Low leakage current
• High speed switching


Specifications

Item
Symbol
Ratings
Unit
Drain to Source voltage
VDSS
250
V
Gate to Source voltage
VGSS
±30
V
Drain current
ID
55
A
Drain peak current
ID (pulse) Note1
165
A
Body-Drain diode reverse Drain current
IDR
55
A
Body-Drain diode reverse Drain peak current
IDR (pulse) Note1
165
A
Avalanche current
IAP Note3
19
A
Avalanche energy
EAR Note3
22.5
mJ
Channel dissipation
Pch Note2
200
W
Channel to case thermal impedance
ch-c
0.625
°C/W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
55 to +150
°C



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