H5N2510DS Selling Leads, Price trend, H5N2510DS DataSheet download, circuit diagram from SeekIC.com

Features: • Low on-resistance• Low drive current• High speed switchingSpecifications Parameter Symbol Ratings UNIT Drain to Source Voltage VDSS 250 V Gate to Source Voltage VGSS ±20 V Drain Current ID 5 A Drain Current (Pulse) ID(pulse)Note 1 20 ...

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SeekIC No. : 004357676 Detail

H5N2510DS: Features: • Low on-resistance• Low drive current• High speed switchingSpecifications Parameter Symbol Ratings UNIT Drain to Source Voltage VDSS 250 V Gate to Sour...

H5N2510DS Data Sheet

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Part Number:: H5N2510DS
Supply Ability:: 5000

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1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/12/21

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H5N2001LD evaluate
Features: • Low on-resistance• Low leakage current• High speed switchingSpecific...
H5N2001LM evaluate
Features: • Low on-resistance• Low leakage current• High speed switchingSpecific...
H5N2001LS evaluate
Features: • Low on-resistance• Low leakage current• High speed switchingSpecific...

Product Details

Description

Features:

• Low on-resistance
• Low drive current
• High speed switching

Specifications

Parameter	Symbol	Ratings	UNIT
Drain to Source Voltage	V_DSS	250	V
Gate to Source Voltage	V_GSS	±20	V
Drain Current	I_D	5	A
Drain Current (Pulse)	I_{D(pulse) Note 1}	20	A
Body-drain diode reverse drain current	I_DR	5	A
Body-drain diode reverse drain peak current	I_DR _(pulse) Note 1	20	A
Channel dissipation	P_ch	25	W
Channel to case thermal Impedance	ch-c	5	/W
Channel Temperature	T_ch	150
Storage Temperature	T_stg	55 to +150

Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25

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H5N2510DS

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