Features: · Low on-resistance · Low leakage current · High Speed Switching Specifications Parameter Symbol Rating Unit Drain to source voltage VDSS 250 V Gate to source voltage VGSS ±30 V Drain current ID 18 A Drain peak current ID(pulse)Note 1 72 A Bodydrain d...
H5N2502CF: Features: · Low on-resistance · Low leakage current · High Speed Switching Specifications Parameter Symbol Rating Unit Drain to source voltage VDSS 250 V Gate to source voltage VGS...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Parameter | Symbol | Rating | Unit |
Drain to source voltage | VDSS | 250 | V |
Gate to source voltage | VGSS | ±30 | V |
Drain current | ID | 18 | A |
Drain peak current | ID(pulse)Note 1 | 72 | A |
Bodydrain diode reverse drain current | IDR | 18 | A |
Body-drain diode reverse drain peak current | IDR(pulse)Note 1 | 72 | A |
Avalanche current | IAPNote3 | 18 | A |
Channel dissipation |
PchNote 2 |
35 |
W |
Channel to case Thermal Impedance | ch-c | 3.57 | /W |
Channel temperature | Tch | 150 | |
Storage temperature | Tstg | -55 to +150 |