Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Item Symbol Rating Unit Drain to source voltageGate to source voltageDrain currentDrain peak currentBody-drain diode reverse drain currentBody-drain diode reverse drain peak ...
H5N2306PF: Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Item Symbol Rating Unit Drain to source voltageGate to source voltageDrain...
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Item |
Symbol |
Rating |
Unit |
Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature |
VDSS VGSS ID ID (pulse) IDR IDR (pulse) IAP Pch ch-c Tch Tstg |
230 ±30 30 160 30 160 15 60 2.08 150 55 to +150 |
V V A A A A A W °C/W °C °C |