Features: • Low on-resistance• Low drive current• High speed switchSpecifications Parameter Symbol Value Unit Drain to source voltage VDSS 200 V Gate-to-Source Voltage VGSS ±30 V Drain current ID 6 A Drain peak current IDpulse)Note 1 24 A Body-d...
H5N2005DS: Features: • Low on-resistance• Low drive current• High speed switchSpecifications Parameter Symbol Value Unit Drain to source voltage VDSS 200 V Gate-to-Source Vol...
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Parameter | Symbol | Value | Unit |
Drain to source voltage | VDSS | 200 | V |
Gate-to-Source Voltage | VGSS | ±30 | V |
Drain current | ID | 6 | A |
Drain peak current | IDpulse) Note 1 |
24 | A |
Body-drain diode reverse drain current | IDR | 6 | A |
Body-drain diode reverse drain peak current | IDRpulse) Note 1 |
24 | A |
Power Dissipation | Pch | 25 | W |
Channel to case thermal Impedance | ch-c | 5 | /W |
Power Dissipation | Tch | 150 | |
Operating and Storage Temperature Range | Tstg | -55 to +150 |