H5N2005DS

Features: • Low on-resistance• Low drive current• High speed switchSpecifications Parameter Symbol Value Unit Drain to source voltage VDSS 200 V Gate-to-Source Voltage VGSS ±30 V Drain current ID 6 A Drain peak current IDpulse)Note 1 24 A Body-d...

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SeekIC No. : 004357662 Detail

H5N2005DS: Features: • Low on-resistance• Low drive current• High speed switchSpecifications Parameter Symbol Value Unit Drain to source voltage VDSS 200 V Gate-to-Source Vol...

floor Price/Ceiling Price

Part Number:
H5N2005DS
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/3/13

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Product Details

Description



Features:

• Low on-resistance
• Low drive current
• High speed switch



Specifications

Parameter Symbol Value Unit
Drain to source voltage VDSS 200 V
Gate-to-Source Voltage VGSS ±30 V
Drain current ID 6 A
Drain peak current IDpulse)
Note 1
24 A
Body-drain diode reverse drain current IDR 6 A
Body-drain diode reverse drain peak current IDRpulse)
Note 1
24 A
Power Dissipation Pch 25 W
Channel to case thermal Impedance ch-c 5 /W
Power Dissipation Tch 150
Operating and Storage Temperature Range Tstg -55 to +150
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25



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