Features: • Low on-resistance: R DS (on) = 0.38 typ.• Low leakage current: IDSS = 1 A max (at VDS = 200 V)• High speed switching: tf = 10 ns typ (at VGS = 10 V, VDD = 100 V, ID = 4 A)• Low gate charge: Qg = 14 nC typ (at VDD = 160 V, VGS = 10 V, ID = 8 A)• Avalanche ...
H5N2004DL: Features: • Low on-resistance: R DS (on) = 0.38 typ.• Low leakage current: IDSS = 1 A max (at VDS = 200 V)• High speed switching: tf = 10 ns typ (at VGS = 10 V, VDD = 100 V, ID = ...
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Item |
Symbol |
Value |
Unit |
Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature |
VDSS VGSS ID ID(pulse) IDR IDR(pulse) IAP Pch ch-c Tch Tstg |
200 ±30 8 32 8 32 7 30 4.17 150 55 to +150 |
V V A A A A A W C/W °C °C |