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GT8G136

Application• Compact and Thin (TSSOP-8) package• Enhancement-mode• Peak collector current: IC = 150 A (max) (@VGE=3.0V(min),Ta=70(max))/Specifications Characteristics Symbol Rating Unit Collector-emitter voltage VCES 400 V Gate-emitter voltage DC ...

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SeekIC No. : 004357081 Detail

GT8G136: Application• Compact and Thin (TSSOP-8) package• Enhancement-mode• Peak collector current: IC = 150 A (max) (@VGE=3.0V(min),Ta=70(max))/Specifications Characteristics Symbo...

GT8G136 Data Sheet

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Part Number:
GT8G136
Supply Ability:
5000

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Product Details

Description



Application

• Compact and Thin (TSSOP-8) package
• Enhancement-mode
• Peak collector current: IC = 150 A (max)
                                      (@VGE=3.0V(min),Ta=70(max))/


Specifications

Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES
400
V
Gate-emitter voltage DC
VGES
± 6
V
Pulse
VGES
± 8
Collector current Pulse
(Note 1)
ICP
150
A
Collector power
dissipation(t=10 s)		 Note 2a)
PC (1)
1.1
W
Note 2b)
PC (2)
0.6
W
Junction temperature
Tj
150
Storage temperature range
Tstg
−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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