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GT8G103

Features: ·􀁺 3rd Generation·􀁺 Enhancement−Mode·􀁺 Low Saturation Voltage: VCE (sat) = 8 V (Max.) (@IC = 150 A)·􀁺 4.5 V Gate DriveSpecifications CHARACTERISTIC SYMBOL RATING UNIT Collector−Emitter Voltage VCES 400 V Gate−Emitter ...

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GT8G103: Features: ·􀁺 3rd Generation·􀁺 Enhancement−Mode·􀁺 Low Saturation Voltage: VCE (sat) = 8 V (Max.) (@IC = 150 A)·􀁺 4.5 V Gate DriveSpecifications CHARACTE...

GT8G103 Data Sheet

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Part Number:
GT8G103
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/30

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Product Details

Description



Features:

·􀁺 3rd Generation
·􀁺 Enhancement−Mode
·􀁺 Low Saturation Voltage: VCE (sat) = 8 V (Max.) (@IC = 150 A)
·􀁺 4.5 V Gate Drive


Specifications

CHARACTERISTIC SYMBOL RATING UNIT
Collector−Emitter Voltage VCES 400 V
Gate−Emitter Voltage DC VGES ±6 V
Pulse VGES ±8 V
Collector Current DC IC 8 A
1 ms ICP 150 A
Collector Power
Dissipation		 Ta = 25°C PC 1.3 W
Tc = 25°C PC 20 W
Junction Temperature Tj 150
Storage Temperature Range Tstg −55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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