GT8G132

Application• Supplied in compact and thin package requires only a small mounting area• 5th generation (trench gate structure) IGBT• Enhancement-mode• 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A)• Peak collector current: IC = 150 A (max)Specifications C...

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SeekIC No. : 004357078 Detail

GT8G132: Application• Supplied in compact and thin package requires only a small mounting area• 5th generation (trench gate structure) IGBT• Enhancement-mode• 4-V gate drive voltage: ...

floor Price/Ceiling Price

Part Number:
GT8G132
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Application

• Supplied in compact and thin package requires only a small mounting area
• 5th generation (trench gate structure) IGBT
• Enhancement-mode
• 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A)
• Peak collector current: IC = 150 A (max)



Specifications

Characteristics Symbol
Rating
Unit
Collector-emitter voltage VCES
400
V
Gate-emitter voltage DC VGES
±6
V
Pulse VGES
±8
Collector current DC IC
8
A
1 ms ICP
150
Collector power dissipation (Note 1) PC
1.1
W
Junction temperature Tj
150
°C
Storage temperature range Tstg
−55~150
°C



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