Application• Supplied in compact and thin package requires only a small mounting area• 5th generation (trench gate structure) IGBT• Enhancement-mode• 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A)• Peak collector current: IC = 150 A (max)Specifications C...
GT8G132: Application• Supplied in compact and thin package requires only a small mounting area• 5th generation (trench gate structure) IGBT• Enhancement-mode• 4-V gate drive voltage: ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Characteristics | Symbol |
Rating |
Unit | |
Collector-emitter voltage | VCES |
400 |
V | |
Gate-emitter voltage | DC | VGES |
±6 |
V |
Pulse | VGES |
±8 | ||
Collector current | DC | IC |
8 |
A |
1 ms | ICP |
150 | ||
Collector power dissipation (Note 1) | PC |
1.1 |
W | |
Junction temperature | Tj |
150 |
°C | |
Storage temperature range | Tstg |
−55~150 |
°C |