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GT15J331

Features: • Fourth-generation IGBT• Enhancement mode type• High speed: tf = 0.10 s (typ.)• Low saturation voltage: VCE (sat) = 1.75 V (typ.)• FRD included between emitter and collectorSpecifications Characteristic Symbol Rating Unit Collector-emitter voltag...

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GT15J331: Features: • Fourth-generation IGBT• Enhancement mode type• High speed: tf = 0.10 s (typ.)• Low saturation voltage: VCE (sat) = 1.75 V (typ.)• FRD included between emitt...

GT15J331 Data Sheet

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Part Number:
GT15J331
Supply Ability:
5000

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Product Details

Description



Features:

• Fourth-generation IGBT
• Enhancement mode type
• High speed: tf = 0.10 s (typ.)
• Low saturation voltage: VCE (sat) = 1.75 V (typ.)
• FRD included between emitter and collector


Specifications

Characteristic Symbol Rating Unit
Collector-emitter voltage VCES 600 V
Gate-emitter voltage VGES ±20 V
Collector current DC IC 15 A
1ms ICP 30
Emitter-collector forward current DC IF 15 A
1ms IFM 30
Collector power dissipation (Tc = 25°C) PC 70 W
Junction temperature Tj 150
Storage temperature range Tstg −55~150
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook ("Handling
Precautions"/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).


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