Application` Third-generation IGBT` Enhancement mode type` High speed : tf = 0.30s (Max.) (IC = 15A)` Low saturation voltage : VCE (sat) = 2.7V (Max.) (IC = 15A)` FRD included between emitter and collectorSpecifications Characteristics Symbol Rating Unit Collector−Emitter ...
GT15J301: Application` Third-generation IGBT` Enhancement mode type` High speed : tf = 0.30s (Max.) (IC = 15A)` Low saturation voltage : VCE (sat) = 2.7V (Max.) (IC = 15A)` FRD included between emitter and co...
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Characteristics |
Symbol |
Rating |
Unit | |
Collector−Emitter Voltage |
VCES |
600 |
V | |
Gate−Emitter Voltage |
VGES |
±20 |
V | |
Collector Current | DC |
IC |
15 |
A |
1ms |
ICP |
30 |
A | |
Emitter−Collector Forward Current |
DC |
IF |
15 |
A |
1ms |
IFM |
30 |
A | |
Collector Power Dissipation (Tc = 25) |
PC |
35 |
W | |
Junction temperature |
Tj |
150 |
||
Storage temperature range |
Tstg |
-55~150 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).