GT15J301(Q)

IGBT Transistors IGBT, 600V, 15A

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SeekIC No. : 00143663 Detail

GT15J301(Q): IGBT Transistors IGBT, 600V, 15A

floor Price/Ceiling Price

Part Number:
GT15J301(Q)
Mfg:
Toshiba
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/12/24

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-220(NIS)-3    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Packaging :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-220(NIS)-3


Parameters:

Technical/Catalog InformationGT15J301(Q)
VendorToshiba
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)15A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 15A
Power - Max35W
Mounting TypeThrough Hole
Package / Case*
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names GT15J301 Q
GT15J301Q



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