IGBT Transistors IGBT, 600V, 15A
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V |
Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C |
Package / Case : | TO-220(NIS)-3 |
Technical/Catalog Information | GT15J301(Q) |
Vendor | Toshiba |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 15A |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 15A |
Power - Max | 35W |
Mounting Type | Through Hole |
Package / Case | * |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | GT15J301 Q GT15J301Q |