Features: *High Breakdown Voltage*Low On-resistance*RoHS CompliantSpecifications Parameter Symbol Ratings Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±25 V Continuous Drain Current3, VGS@10V ID @TA=25 7.6 A Continuous Drain Current3, VGS@10V ID @TA=70 ...
GSS9975: Features: *High Breakdown Voltage*Low On-resistance*RoHS CompliantSpecifications Parameter Symbol Ratings Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±25 V Cont...
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Parameter | Symbol | Ratings | Unit |
Drain-Source Voltage | VDS | 60 | V |
Gate-Source Voltage | VGS | ±25 | V |
Continuous Drain Current3, VGS@10V | ID @TA=25 | 7.6 | A |
Continuous Drain Current3, VGS@10V | ID @TA=70 | 6.1 | A |
Pulsed Drain Current1 | IDM | 30 | A |
Total Power Dissipation | PD @TA=25 | 2 | W |
Linear Derating Factor | 0.016 | W/ | |
Operating Junction and Storage Temperature Range | Tj, Tstg | -55~+150 |
The GSS9975 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.