Features: *Low on-resistance*Capable of 2.5V gate drive*Optimal DC/DC battery applicationSpecifications Parameter Symbol Ratings Unit? Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current3 ID @TA=25 6.8 A ...
GSS9922E: Features: *Low on-resistance*Capable of 2.5V gate drive*Optimal DC/DC battery applicationSpecifications Parameter Symbol Ratings Unit? Drain-Source Voltage VDS 20 V ...
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Parameter |
Symbol |
Ratings |
Unit? |
Drain-Source Voltage |
VDS |
20 |
V |
Gate-Source Voltage |
VGS |
±12 |
V |
Continuous Drain Current3 |
ID @TA=25 |
6.8 |
A |
Continuous Drain Current3 |
ID @TA=70 |
5.4 |
A |
Pulsed Drain Current1 |
IDM |
25 |
A |
Total Power Dissipation |
PD @TA=25 |
2 |
W |
Linear Derating Factor |
0.016 |
W/ | |
Operating Junction and Storage Temperature Range |
Tj, Tstg |
-55 ~ +150 |
The GSS9922E provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.