Features: *Low on-resistance*Capable of 2.5V gate drive*Low drive current*Surface mount packageSpecifications Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current3, VGS@10V ID @TA=25 6.0 mA Continuous Drain...
GSS9926E: Features: *Low on-resistance*Capable of 2.5V gate drive*Low drive current*Surface mount packageSpecifications Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-Source...
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Parameter | Symbol | Ratings | Unit |
Drain-Source Voltage | VDS | 20 | V |
Gate-Source Voltage | VGS | ±12 | V |
Continuous Drain Current3, VGS@10V | ID @TA=25 | 6.0 | mA |
Continuous Drain Current3, VGS@10V | ID @TA=70 | 4.8 | mA |
Pulsed Drain Current1 | IDM | 20 | mA |
Total Power Dissipation | PD @TA=25 | 2 | W |
Linear Derating Factor | 0.016 | W/ | |
Operating Junction and Storage Temperature Range | Tj, Tstg | -55 ~ +150 |
The GSS9926E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.