GS820E32T-6

Features:

•FT pin for user configurable flow through or pipelined operation.
• Dual Cycle Deselect (DCD) Operation.
• 3.3V +10%/-5% Core power supply
• 2.5V or 3.3V I/O supply.
• LBO pin for linear or interleaved burst mode.
• Internal input resistors on mode pins allow floating mode pins.
• Default to Interleaved Pipelined Mode.
• Byte write (BW) and/or global write (GW) operation.
• Common data inputs and data outputs.
• Clock Control, registered, address, data, and control.
• Internal Self-Timed Write cycle.
• Automatic power-down for portable applications.
• JEDEC standard 100-lead TQFP or QFP package.



Application

The GS820E32 is a 2,097,152 bit high performance synchronous SRAM with a 2 bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPU's, the device now finds application in synchronous SRAM applications ranging from DSP main store to networking chip set support.

Pinout




Specifications

Symbol	Description	Value	Unit
VCC	Voltage on VDD Pins	-0.5 to 4.6	V
VDDQ	Voltage in VDDQ Pins	-0.5 to VDD	V
VCK	Voltage on Clock Input Pin	-0.5 to 6	V
VI/O	Voltage on I/O Pins	-0.5 to VDDQ+0.5 ( 4.6 V max.)	V
VIN	Voltage on Other Input Pins	-0.5 to VDD+0.5 ( 4.6 V max.)	V
IIN	Input Current on Any Pin	+/- 20	mA
IOUT	Output Current on Any I/O Pin	+/- 20	mA
PD	Package Power Dissipation	1.5	W
TSTG	Storage Temperature	-55 to 125
TBIAS	Temperature Under Bias	-55 to 125

Note: Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation
          should be restricted to Recommended Operating Conditions. Exposure to conditions exceeding the
          Absolute Maximum Ratings, for an extended period of time, may affect reliability of this component.