GS82032AQ-133

Features: • Single Cycle Deselect (SCD) operation• 3.3 V +10%/5% core power supply• 2.5 V or 3.3 V I/O supply• LBO pin for Linear or Interleaved Burst mode• Internal input resistors on mode pins allow floating mode pins• Default to Interleaved Pipelined modeR...

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GS82032AQ-133 Picture
SeekIC No. : 004355932 Detail

GS82032AQ-133: Features: • Single Cycle Deselect (SCD) operation• 3.3 V +10%/5% core power supply• 2.5 V or 3.3 V I/O supply• LBO pin for Linear or Interleaved Burst mode• Internal in...

floor Price/Ceiling Price

Part Number:
GS82032AQ-133
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

• Single Cycle Deselect (SCD) operation
• 3.3 V +10%/5% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipelined mode
• Byte Write (BW) and/or Global Write (GW) operation
• Common data inputs and data outputs
• Clock Control, registered, address, data, and control
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC standard 100-lead TQFP or QFP package



Application

     The GS82032A is a 2,097,152-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache  applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support


Specifications

 

Symbol

Description

Value

Unit

VDD

Voltage on VDD Pins

0.5 to 4.6

V

VDDQ

Voltage in VDDQ Pins

0.5 to VDD

V

VCK

Voltage on Clock Input Pin

0.5 to 6

V

V I/O

Voltage on I/O Pins

0.5 to VDDQ+0.5 ( 4.6 V max.)

V

VIN

Voltage on Other Input Pins

0.5 to VDD+0.5 ( 4.6 V max.)

V

IIN

Input Current on Any Pin

+/20

mA

IOUT

Output Current on Any I/O Pin

+/20

mA

PD

Package Power Dissipation

1.5

W

TSTG

Storage Temperature

55 to 125

oC

TBIAS

Temperature Under Bias

55 to 125

oC




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