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GS82032Q-138

Features: • FT pin for user-configurable flow through or pipelineoperation• Single Cycle Deselect (SCD) operation• 3.3 V +10%/5% core power supply• 2.5 V or 3.3 V I/O supply•LBO pin for Linear or Interleaved Burst mode• Internal input resistors on mode pins allo...

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SeekIC No. : 004355937 Detail

GS82032Q-138: Features: • FT pin for user-configurable flow through or pipelineoperation• Single Cycle Deselect (SCD) operation• 3.3 V +10%/5% core power supply• 2.5 V or 3.3 V I/O supply&...

GS82032Q-138 Data Sheet

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Part Number:
GS82032Q-138
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• FT pin for user-configurable flow through or pipeline
operation
• Single Cycle Deselect (SCD) operation
• 3.3 V +10%/5% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Common data inputs and data outputs
• Clock Control, registered, address, data, and control
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 100-lead TQFP or QFP package


Application

The GS82032 is a 2,097,152-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications ranging from DSP main store to networking chip set support.




Pinout

Connection Diagram


Specifications

Symbol Description Value Unit
VDD Voltage on VDD Pins 0.5 to 4.6 V
VDDQ Voltage in VDDQ Pins 0.5 to VDD V
VCK Voltage on Clock Input Pin -0.5 to 6 V
VI/O Voltage on I/O Pins 0.5 to VDDQ+0.5 ( 4.6 V max.) V
VIN Voltage on Other Input Pins 0.5 to VDD+0.5 ( 4.6 V max.) V
IIN Input Current on Any Pin +/20 mA
IOUT Output Current on Any I/O Pin +/20 mA
PD Package Power Dissipation 1.5 W
TSTG Storage Temperature 55 to 125
TBIAS Temperature Under Bias 55 to 125

Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of this component.




Description

The GS82032 is a 2,097,152-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the GS82032 now finds application in synchronous SRAM applications ranging from DSP main store to networking chip set support.




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