Features: ·Low VCE(SAT)·High Thermal Cycling Capability·Non Punch Through Silicon·Isolated MMC Base with AlN SubstratesApplication·High Reliability Inverters·Motor Controllers·Traction Drives·Low-Loss System RetrofitsSpecificationsStresses above those listed under 'Absolute Maximum Ratings' may ca...
GP2401ESM18: Features: ·Low VCE(SAT)·High Thermal Cycling Capability·Non Punch Through Silicon·Isolated MMC Base with AlN SubstratesApplication·High Reliability Inverters·Motor Controllers·Traction Drives·Low-Lo...
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Features: ·n - Channel Enhancement Mode·Non Punch Through Silicon·High Gate Input Impedance·Optimi...
Features: ·High Thermal Cycling Capability·Non Punch Through Silicon·Isolated MMC Base with AlN Su...
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25°C unless stated otherwise
Symbol |
Parameter |
Conditions |
Ratings |
Unit |
VCES | Collector-emitter voltage |
VGE = 0V |
1800 |
V |
VGES | Gate-emitter voltage |
±20 |
V | |
IC | Continuous collector current |
Tcase = 80°CforTj = 150°C |
2400 |
A |
IC(PK) | Peak collector current |
1ms, Tcase = 115°C |
4800 |
A |
Pmax | Max. transistor power dissipation |
Tcase = 25°C, Tj = 150°C |
20.8 |
KW |
Visol | Isolation voltage |
Commoned terminals to base plate. AC RMS, 1 min, 50Hz |
4000 |
°C |