GP2400ESM12

Features:

·n - Channel Enhancement Mode
·Non Punch Through Silicon
·High Gate Input Impedance
·Optimised For High Power High Frequency Operation
·Isolated MMC Base with AlN
·1200V Rating
·2400A Per Module


Application

·High Power Switching
·Motor Control
·Inverters
·Traction Drives


Specifications

Symbol	Parameter	Test Conditions	Max.	Units
VCES	Collector-emitter voltage	VGE = 0V	1200	V
VGES	Gate-emitter voltage	-	±20	V
IC	Continuous collector current	DC, Tcase = 75°C, Tj = 125°C	2400	A
IC(PK)	Peak collector current	1ms, Tcase = 75°C, Tj = 125°C	4800	A
Pmax	Max. power dissipation	Tcase = 25°C (Transistor), Tj = 150°C	20.8	kW
Visol	Isolation voltage	Commoned terminals to base plate. AC RMS, 1 min, 50Hz	2500	V

Description

The GP2400ESM12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. The high impedance gate simplifies gate of GP2400ESM12 drive considerations enabling operation directly from low power control circuitry.

Fast switching times allow high frequency operation making the GP2400ESM12 suitable for the latest drive designs employing pwm and high frequency switching. The IGBT has a wide reverse bias safe operating area (RBSOA) for ultimate reliability in demanding applications.

GP2400ESM12 incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.

The powerline range of high power modules includes dual and single switch configurations with a range of current and voltage capabilities to match customer system demands.

GP2400ESM12 is optimised for traction drives and other applications requiring high thermal cycling capability.