Features: Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 1200A Per ModuleApplication High Power Inverters Motor Controllers Induction Heating Resonant ConvertersPinoutSpecifications Symbol Parameter Test Conditions Max. Units VCES Collector...
GP1200FSS18: Features: Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 1200A Per ModuleApplication High Power Inverters Motor Controllers Induction Heating Resonant Conv...
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Features: High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Su...
Features: High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Su...
Features: Low VCE(SAT) Non Punch Through SiliconIsolated Copper Baseplate Low Inductance Internal...
Symbol | Parameter | Test Conditions | Max. | Units |
VCES | Collector-emitter voltage | VGE = 0V | 1800 | V |
VCES | Gate-emitter voltage | ±20 | V | |
IC | Continuous collector current | Tcase = 50˚C | 1200 | A |
IC(PK) | Peak collector current | 1ms, Tcase = 110˚C | 2400 | A |
Pmax | Max. transistor power dissipation | Tcase = 25˚C, Tj = 150˚C | 8.5 | kW |
Visol | Isolation voltage | Commoned terminals to base plate. AC RMS, 1 min, 50Hz | 4000 | V |