GP1200ESM33

Features:

High Thermal Cycling Capability
Non Punch Through Silicon
Isolated MMC Base with AlN Substrates


Application

High Reliability Inverters
Motor Controllers
Traction Drives
Resonant Converters


Pinout




Specifications

Symbol	Parameter	Test Conditions	Max.	Units
VCES	Collector-emitter voltage	VGE = 0V	1800	V
VCES	Gate-emitter voltage		±20	V
IC	Continuous collector current	Tcase = 70°C for Tj = 125°C	1600	A
IC(PK)	Peak collector current	1ms, Tcase = 120˚C	2400	A
Pmax	Max. transistor power dissipation	Tcase = 25˚C, Tj = 150˚C	14.7	kW
Visol	Isolation voltage	Commoned terminals to base plate. AC RMS, 1 min, 50Hz	6000	V

Description

The Powerline range of high power modules GP1200ESM33 includes dual and single switch configurations covering voltages from 1200V to 3300V and currents up to 4800A.

The GP1200ESM33 is a single switch 3300V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. This device is optimised for traction drives and other applications requiring high thermal cycling capability or very high reliability.

The GP1200ESM33 incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.