GP1200FSM18

Features:

High Thermal Cycling Capability
Non Punch Through Silicon
Isolated MMC Base with AlN Substrates
1200A Per Module


Application

High Reliability Inverters
Motor Controllers
Traction Drives
Resonant Converters


Pinout




Specifications

Symbol	Parameter	Test Conditions	Max.	Units
VCES	Collector-emitter voltage	VGE = 0V	1800	V
VCES	Gate-emitter voltage		±20	V
IC	Continuous collector current	Tcase = 70°C for Tj = 125°C	1600	A
IC(PK)	Peak collector current	1ms, Tcase = 115˚C	2400	A
Pmax	Max. transistor power dissipation	Tcase = 25˚C, Tj = 150˚C	10.4	kW
Visol	Isolation voltage	Commoned terminals to base plate. AC RMS, 1 min, 50Hz	4000	V

Description

The Powerline range of high power modules GP1200FSM18 includes dualand single switch configurations covering voltages from 600V to 3300V and currents up to 4800A.

The GP1200FSM18 is a single switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. This device is optimised for traction drives and other applications requiring high thermal cycling capability or very high reliability.

The GP1200FSM18 incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.