DescriptionThe GB75YF120U is designed as one kind of IGBT fourpack modules with current of 75A. GB75YF120U's benefits include benchmark efficiency for SMPS appreciation in particular HF welding, rugged transient performance, low EMI, requires less snubbing, direct mounting to heatsink space saving...
GB75YF120U: DescriptionThe GB75YF120U is designed as one kind of IGBT fourpack modules with current of 75A. GB75YF120U's benefits include benchmark efficiency for SMPS appreciation in particular HF welding, rug...
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DescriptionThe GB75DA120UP is designed as one kind of insulated gate bipolar transistors (ultrafas...
Features: • Square RBSOA• HEXFRED low Qrr, low Switching Energy• Positive VCE(on...
The GB75YF120U is designed as one kind of IGBT fourpack modules with current of 75A. GB75YF120U's benefits include benchmark efficiency for SMPS appreciation in particular HF welding, rugged transient performance, low EMI, requires less snubbing, direct mounting to heatsink space saving, PCB solderable terminals and low junction to case thermal resistance.
GB75YF120U has seven features. (1)Square RBSOA. (2)HEXFRED low Qrr, low switching energy. (3)Positive Vce(on) temperature coefficient. (4)Copper baseplate. (5)Low stray inductance design. (6)Speed 8kHz to 60kHz. (7)Compliant to RoHS directive 2002/95/EC. Those are all the main features.
Some absolute maximum ratings of GB75YF120U have been concluded into several points as follow. (1)Its collector to emitter voltage would be 1200V. (2)Its continuous collector current would be 100A at Tc=25°C and would be 67A at Tc=80°C. (3)Its pulsed collector current see fig. C.T.5 would be 200A. (4)Its clamped inductive load current would be 200A. (5)Its diode continuous forward current would be 60A at Tc=25°C and would be 40A at Tc=80°C. (6)Its diode maximum forward current would be 150A. (7)Its gate to emitter voltage would be +/-20V. (8)Its maximum power dissipation (IGBT) would be 480W at Tc=25°C and would be 270W at Tc=80°C. (9)Its maximum operating junction temperature would be 150°C. (10)Its storage temperature range would be from -40°C to +125°C. (11)Its isolation voltage would be AC 2500V (MIN). It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.
Also some electrical characteristics of GB75YF120U are concluded as follow. (1)Its collector to emitter breakdown voltage would be min 1200V. (2)Its gate threshold voltage would be min 4.0V, typ 5.0V and max 6.0V. (3)Its threshold voltage temperature coefficient would be typ -11mV/°C. (4)Its gate to emitter leakage current would be max +/-200nA. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information about GB75YF120U please contact us for details. Thank you!