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GB75YF120N

Features: • Square RBSOA• HEXFRED low Qrr, low Switching Energy• Positive VCE(on) Temperature Coefficient• Copper Baseplate• Low Stray Inductance DesignSpecifications Parameter Max. Units VCES Collector-to-Emitter Voltage 1200 V IC @ Tc=25°C Conti...

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GB75YF120N: Features: • Square RBSOA• HEXFRED low Qrr, low Switching Energy• Positive VCE(on) Temperature Coefficient• Copper Baseplate• Low Stray Inductance DesignSpecifications ...

GB75YF120N Data Sheet

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Part Number:
GB75YF120N
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Square RBSOA
• HEXFRED low Qrr, low Switching Energy
• Positive VCE(on) Temperature Coefficient
• Copper Baseplate
• Low Stray Inductance Design


Specifications

  Parameter Max. Units
VCES Collector-to-Emitter Voltage 1200 V
IC @ Tc=25°C Continuous Collector Current 100 A
IC @ Tc=80°C Continuous Collector Current 67 A
ICM Pulsed Collector Current (Ref. Fig. C.T.5) 200 A
ILM Clamped Inductive Load Current 200 A
IF @ Tc=25°C Diode Continuous Forward Current 40 A
IF @ Tc=25°C Diode Continuous Forward Current 25 A
IFM Diode Maximum Forward Current 150 A
VGE Gate-to-Emitter Voltage ±20 V
PD @ Tc=25°C Maximum Power Dissipation (IGBT) 480 W
PD @ Tc=80°C Maximum Power Dissipation (IGBT) 270 W
TJ Maximum Operating Junction Temperature 150 °C
TSTG Storage Temperature Range -40 to +125 °C
VISOL Isolation Voltage AC 2500 (MIN) V



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