GB75DA120UP

The GB75DA120UP is designed as one kind of insulated gate bipolar transistors (ultrafast IGBT) with current of 75A. GB75DA120UP is designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating and would be easy to assemble and parallel.

GB75DA120UP has ten features. (1)NPT generation V IGBT technology. (2)Square RBSOA. (3)HEXFRED low qrr, low switching energy. (4)Positive Vce(on) temperature coefficient. (5)Fully isolated package. (6)Speed 8kHz to 60kHz. (7)Very low internal inductance (5nH typical). (8)Industry standard outline. (9)UL approved file E78996. (10)Compliant to RoHS directive 2002/95/EC. Those are all the main features.

Some absolute maximum ratings of GB75DA120UP have been concluded into several points as follow. (1)Its collector to emitter voltage would be 1200V. (2)Its continuous collector current would be 131A at Tc=25°C and would be 89A at Tc=80°C. (3)Its pulsed collector current would be 200A. (4)Its clamped inductive load current would be 200A. (5)Its diode continuous forward current would be 59A at Tc=25°C and woud be 39A at Tc=80°C. (6)Its gate to emitter voltage would be +/-20V. (7)Its power dissipation, IGBT would be 658W at Tc=25°C and would be 369W at Tc=80°C. (8)Its power dissipation, diode would be 240W at Tc=25°C and would be 135W at Tc=80°C. (9)Its isolation voltage would be 2500V. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of GB75DA120UP are concluded as follow. (1)Its collector to emitter breakdown voltage would be min 1200V. (2)Its gate threshold voltage would be min 4V, typ 5V and max 6V. (3)Its temperature coefficient of threshold voltage would be typ -12mV/°C. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information about GB75DA120UP please contact us for details. Thank you!