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GAL26CLV12

Features: • HIGH PERFORMANCE E2CMOS® TECHNOLOGY - 5 ns Maximum Propagation Delay - Fmax = 200 MHz - 3.5 ns Maximum from Clock Input to Data Output - UltraMOS® Advanced CMOS Technology• 3.3V LOW VOLTAGE 26CV12 ARCHITECTURE - JEDEC-Compatible 3.3V Interface Standard - Inputs and ...

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SeekIC No. : 004347116 Detail

GAL26CLV12: Features: • HIGH PERFORMANCE E2CMOS® TECHNOLOGY - 5 ns Maximum Propagation Delay - Fmax = 200 MHz - 3.5 ns Maximum from Clock Input to Data Output - UltraMOS® Advanced CMOS Technology&...

GAL26CLV12 Data Sheet

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Part Number:
GAL26CLV12
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• HIGH PERFORMANCE E2CMOS® TECHNOLOGY
   - 5 ns Maximum Propagation Delay
   - Fmax  = 200 MHz
   - 3.5 ns Maximum from Clock Input to Data Output
   - UltraMOS®  Advanced CMOS Technology
• 3.3V LOW VOLTAGE 26CV12 ARCHITECTURE
   - JEDEC-Compatible 3.3V Interface Standard
   - Inputs and I/O Interface with Standard 5V TTL Devices
• ACTIVE PULL-UPS ON ALL PINS
• E2CELL TECHNOLOGY
   - Reconfigurable Logic
   - Reprogrammable Cells
   - 100% Tested/100% Yields
   - High Speed Electrical Erasure (<100ms)
   - 20 Year Data Retention
• TWELVE OUTPUT LOGIC MACROCELLS
   - Maximum Flexibility for Complex Logic Designs
   - Programmable Output Polarity
• PRELOAD AND POWER-ON RESET OF ALL REGISTERS
   - 100% Functional Testability
• APPLICATIONS INCLUDE:
   - Glue Logic for 3.3V Systems
   - DMA Control
   - State Machine Control
   - High Speed Graphics Processing
   - Standard Logic Speed Upgrade
• ELECTRONIC SIGNATURE FOR IDENTIFICATION


Pinout

Connection Diagram


Specifications

Supply voltage VCC .................................... -0.5 to +4.6V
Input or I/O voltage applied ....................... -0.5 to +5.6V
Off-state output voltage applied ................ -0.5 to +4.6V
Storage Temperature ................................... -65 to 150
Ambient Temperature with
   Power Applied ........................................... -55 to 125

1.Stresses above those listed under the  "Absolute Maximum Ratings"
   may cause permanent damage to the device.  These are stress only
   ratings and functional operation of the device at these or at any
   other conditions above those indicated in the operational sections of
   this specification is not implied (while programming, follow the
   programming specifications).




Description

The GAL26CLV12D, at 5 ns maximum propagation delay time, provides higher performance than its 5V counterpart.  The GAL26CLV12D can interface with both 3.3V and 5V signal levels. The GAL26CLV12D is manufactured using Lattice Semiconductor's advanced 3.3V E2 CMOS process, which combines CMOS with Electrically Erasable (E2 ) floating gate technology. High speed erase times (<100ms) allow the devices to be reprogrammed quickly and efficiently.

The generic architecture of GAL26CLV12 provides maximum design flexibility byallowing the Output Logic Macrocell (OLMC) to be configured by the user.

Unique test circuitry and reprogrammable cells of GAL26CLV12 allow complete AC, DC, and functional testing during manufacture.  As a result, Lattice Semiconductor delivers 100% field programmability and function- ality of all GAL products.  In addition, 100 erase/write cycles and data retention in excess of 20 years are specified.




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