Features: • HIGH PERFORMANCE E2 CMOS® TECHNOLOGY - 5 ns Maximum Propagation Delay - Fmax = 166 MHz - 4 ns Maximum from Clock Input to Data Output - UltraMOS® Advanced CMOS Technology• 50% to 75% REDUCTION IN POWER FROM BIPOLAR - 75mA Typ Icc on Low Power Device - 45mA Typ Icc o...
GAL20V8: Features: • HIGH PERFORMANCE E2 CMOS® TECHNOLOGY - 5 ns Maximum Propagation Delay - Fmax = 166 MHz - 4 ns Maximum from Clock Input to Data Output - UltraMOS® Advanced CMOS Technology...
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Features: • 3.3V LOW VOLTAGE, ZERO POWER OPERATION - JEDEC Compatible 3.3V Interface Standar...
The GAL20V8C, at 5ns maximum propagation delay time, com- bines a high performance CMOS process with Electrically Eras- able (E2 ) floating gate technology to provide the highest speed performance available in the PLD market. High speed erase times (<100ms) allow the devices to be reprogrammed quickly and ef- ficiently.
The generic architecture provides maximum design flexibility by allowing the Output Logic Macrocell (OLMC) to be configured by the user. An important subset of the many architecture configura- tions possible with the GAL20V8 are the PAL
architectures listed in the table of the macrocell description section. GAL20V8 devices are capable of emulating any of these PAL architectures with full function/fuse map/parametric compatibility.
Unique test circuitry and reprogrammable cells of GAL20V8 allow complete AC, DC, and functional testing during manufacture. As a result, Lattice Semiconductor delivers 100% field programmability and function- ality of all GAL products. In addition, 100 erase/write cycles and data retention in excess of 20 years are specified.