FSYC9055D

Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . ... . . . . V_DS -60 V
Drain to Gate Voltage (R_GS = 20k) . . . . . . . . . . . . . . . . . . . . . . . .. . ... .V_DGR -60 V
Continuous Drain Current
T_C = 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .I_D 59 A
T_C = 100. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . .I_D 38 A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... . .. I_DM 177 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... . . . . . . .. V_GS ±20 V
Maximum Power Dissipation
T_C = 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . P_T 162 W
T_C = 100. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . P_T 65 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . 1.30 W/
Single Pulsed Avalanche Current, L = 100H, (See Test Figure). . . .. .. . . .I_AS 177 A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . .  . . . .. . I_S 59 A
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . .. . . I_SM 177 A
Operating and Storage Temperature . . . . . . . . . . . . . . . .. .. . T_J, T_STG -55 to 150
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . .. . . . . . . . . . T_L 300

The Discrete Products Operation of Harris Semiconductor FSYC9055D has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices, FSYC9055D is ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.

The Harris portfolio of SEGR resistant radiation hardened MOSFETs FSYC9055D includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available.

This MOSFET FSYC9055D is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure.FSYC9055D is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation,switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. FSYC9055D can be operated directly from integrated circuits.

Reliability screening FSYC9055D is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Harris Semiconductor for any desired deviations from the data sheet.