Features: • 70A, 100V, rDS(ON) = 0.022
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 9nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 3e13 Neutrons/cm2
- Usable to 3e14 Neutrons/cm2SpecificationsDrain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .... . . . . VDS 100 V
Drain to Gate Voltage (RGS = 20k) . . . . . . . . . . . . . . . . . . . . . . . .. . ... . . . .VDGR 100 V
Continuous Drain Current
TC = 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... . . . . . .. .ID 70 A
TC = 100. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... . . . . . . .. . . .ID 46 A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . ..... . . IDM 200 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .... . . VGS ±20 V
Maximum Power Dissipation
TC = 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . .. . . . PT 208 W
TC = 100. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . .. . . . . PT 83 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . 1.67 W/
Single Pulsed Avalanche Current, L = 100H, (See Test Figure). . . .. . . . .. . . .IAS 200 A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . .. . .. . . . . . IS 70 A
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . ISM 200 A
Operating and Storage Temperature . . . . . . . . . . . . . . . .. . . . .. . TJ, TSTG -55 to 150
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . TL 300
Description
The Discrete Products Operation of Harris Semiconductor FSYC160D has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices, FSYC160D is ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened MOSFETs FSYC160D includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings.Numerous packaging options are also available
This MOSFET FSYC160D is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure.FSYC160D is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation,switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. FSYC160D can be operated directly from integrated circuits.
Reliability screening FSYC160D is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Harris Semiconductor for any desired deviations from the data sheet.
FSYC160D Data Sheet
