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FSYC055D

Features: • 70A (Note),60V, rDS(ON) = 0.012• Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)• Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias• D...

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SeekIC No. : 004344921 Detail

FSYC055D: Features: • 70A (Note),60V, rDS(ON) = 0.012• Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)• Single Event - Safe Operating Area Curve for Single Event Effects - SEE Imm...

FSYC055D Data Sheet

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Part Number:
FSYC055D
Supply Ability:
5000

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Product Details

Description



Features:

• 70A (Note),60V, rDS(ON) = 0.012
• Total Dose
   - Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
   - Safe Operating Area Curve for Single Event Effects
   - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
• Dose Rate
   - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
   - Typically Survives 2E12 if Current Limited to IDM
• Photo Current
   - 12nA Per-RAD(Si)/s Typically
• Neutron
   - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2
   - Usable to 1E14 Neutrons/cm2



Specifications

FSYC055D, FSYC055R UNITS
Drain-Source Voltage VDS
60
V
Drain-Gate Voltage (RGS = 20k). VDGR
60
V
Continuous Drain Current
TC = 25
TC = 100
ID
ID
70 (Note)
56
A
A
Pulsed Drain Current IDM
200
A
Gate-Source Voltage VGS
±20
V
Maximum Power Dissipation
TC = 25
TC = 100		 PT
PT
162
65
W
W
Linear Derating Factor
1.30
W/
Single Pulsed Avalanche Current,L = 100H, (See Test Figure) IAS

200
A
Continuous Source Current (Body Diode) IS
70
A
Pulsed Source Current (Body Diode) ISM
200
A
Operating And Storage Temperature TJ, TSTG
-55 to +150
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max		 TL
300
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE: Current limited by package capability.


Description

The Discrete Products Operation of Intersil FSYC055D has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices, FSYC055D is ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.

The Intersil portfolio of SEGR resistant radiation hardened MOSFETs FSYC055D includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available.

This MOSFET FSYC055D is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. FSYC055D is specially designed and processed to be radiation tolerant. The MOSFET FSYC055D is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.

Reliability screening FSYC055D is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviations from the data sheet.

Formerly available as type TA17659.




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