FSYC055D Selling Leads, Price trend, FSYC055D DataSheet download, circuit diagram from SeekIC.com

Features: • 70A (Note),60V, rDS(ON) = 0.012• Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)• Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias• D...

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SeekIC No. : 004344921 Detail

FSYC055D: Features: • 70A (Note),60V, rDS(ON) = 0.012• Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)• Single Event - Safe Operating Area Curve for Single Event Effects - SEE Imm...

FSYC055D Data Sheet

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Part Number:: FSYC055D
Supply Ability:: 5000

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Upload time: 2024/11/21

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Product Details

Description

Features:

• 70A (Note),60V, r_DS(ON) = 0.012
• Total Dose
   - Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
   - Safe Operating Area Curve for Single Event Effects
   - SEE Immunity for LET of 36MeV/mg/cm² with V_DS up to 80% of Rated Breakdown and V_GS of 10V Off-Bias
• Dose Rate
   - Typically Survives 3E9 RAD (Si)/s at 80% BV_DSS
   - Typically Survives 2E12 if Current Limited to I_DM
• Photo Current
   - 12nA Per-RAD(Si)/s Typically
• Neutron
   - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm²
   - Usable to 1E14 Neutrons/cm²

Specifications

		FSYC055D, FSYC055R	UNITS
Drain-Source Voltage	V_DS	60	V
Drain-Gate Voltage (R_GS = 20k).	V_DGR	60	V
Continuous Drain Current T_C = 25 T_C = 100	I_D I_D	70 (Note) 56	A A
Pulsed Drain Current	I_DM	200	A
Gate-Source Voltage	V_GS	±20	V
Maximum Power Dissipation T_C= 25 T_C = 100	P_T P_T	162 65	W W
Linear Derating Factor		1.30	W/
Single Pulsed Avalanche Current,L = 100H, (See Test Figure)	I_AS	200	A
Continuous Source Current (Body Diode)	I_S	70	A
Pulsed Source Current (Body Diode)	I_SM	200	A
Operating And Storage Temperature	T_J, T_STG	-55 to +150
Lead Temperature (During Soldering) Distance > 0.063 in. (1.6mm) From Case, 10s Max	T_L	300

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE: Current limited by package capability.

Description

The Discrete Products Operation of Intersil FSYC055D has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices, FSYC055D is ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.

The Intersil portfolio of SEGR resistant radiation hardened MOSFETs FSYC055D includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available.

This MOSFET FSYC055D is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. FSYC055D is specially designed and processed to be radiation tolerant. The MOSFET FSYC055D is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.

Reliability screening FSYC055D is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviations from the data sheet.

Formerly available as type TA17659.

FSYC055D

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