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FSS913A0D

Features: 10A, 100V, rDS(ON)= 0.280UIS RatedTotal Dose -Meets Pre-RAD Specifcations to 100K RAD (Si) -Rated to 300K RAD (Si)Single Event -Safe Operating Area Curve for Single Event Effe -SEE Immunity for LET of 36MeV/mg/cm2with VDSup to 100% of Rated Breakdown and VGSof 10V Off-BiasDose Rate -Typi...

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SeekIC No. : 004344770 Detail

FSS913A0D: Features: 10A, 100V, rDS(ON)= 0.280UIS RatedTotal Dose -Meets Pre-RAD Specifcations to 100K RAD (Si) -Rated to 300K RAD (Si)Single Event -Safe Operating Area Curve for Single Event Effe -SEE Immunit...

FSS913A0D Data Sheet

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Part Number:
FSS913A0D
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

10A, 100V, rDS(ON)= 0.280
UIS Rated
Total Dose
   -Meets Pre-RAD Specifcations to 100K RAD (Si)
   -Rated to 300K RAD (Si)
Single Event
   -Safe Operating Area Curve for Single Event Effe
   -SEE Immunity for LET of 36MeV/mg/cm2 with
   VDS up to 100% of Rated Breakdown and
   VGSof 10V Off-Bias
Dose Rate
   -Typically Survives 3E9 RAD (Si)/s at 80% BVDSs
  -Typically Survives 2E12 if Current Limited to IAS
Photo Current
  -3.0nA Per-RAD (Si)/s Typically
Neutron
  -Maintain Pre-RAD Specifcations
   for 1E13 Neutrons/cm2
  -Usable to 1E14 Neutrons/cm2



Specifications

Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS  = 20k . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..VDGR
Continuous Drain Current
TC  = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . ..I D
TC  = 100 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . .ID
Pulsed Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .   . .IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . .  .VGS
Maximum Power Dissipation
TC  = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .... .PT
TC  = 100 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .PT
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100H (See Test Figure). . . . . . . . . . . . . . . .IAS
Continuous Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..... .IS
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . . .ISM
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . .TJ , TSTG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . .  .TL
(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical)  


Description

Intersil Star*Power™ Rad Hard MOSFETs FSS913A0D have been specifcally developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs FSS913A0D offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems.

Star*Power FETs FSS913A0D combine this electrical capability with total dose radiation hardness up to 300K RADs while maintaining the guaranteed performance for SEE (Single Event Effects) which the Intersil FS families have always featured 




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