FSS923A0R Selling Leads, Price trend, FSS923A0R DataSheet download, circuit diagram from SeekIC.com

Features: 7A, 200V, rDS(ON)= 0.650UIS RatedTotal Dose -Meets Pre-RAD Specifcations to 100K RAD (Si) -Rated to 300K RAD (Si)Single Event -Safe Operating Area Curve for Single Event Effe -SEE Immunity for LET of 36MeV/mg/cm2with VDSup to 100% of Rated Breakdown and VGSof 10V Off-BiasDose Rate -Typic...

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SeekIC No. : 004344775 Detail

FSS923A0R: Features: 7A, 200V, rDS(ON)= 0.650UIS RatedTotal Dose -Meets Pre-RAD Specifcations to 100K RAD (Si) -Rated to 300K RAD (Si)Single Event -Safe Operating Area Curve for Single Event Effe -SEE Immunity...

FSS923A0R Data Sheet

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Part Number:: FSS923A0R
Supply Ability:: 5000

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1~5000

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Upload time: 2024/11/21

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Product Details

Description

Features:

7A, 200V, r_DS(ON)= 0.650
UIS Rated
Total Dose
   -Meets Pre-RAD Specifcations to 100K RAD (Si)
   -Rated to 300K RAD (Si)
Single Event
   -Safe Operating Area Curve for Single Event Effe
   -SEE Immunity for LET of 36MeV/mg/cm² with
   V_DS up to 100% of Rated Breakdown and
   V_GSof 10V Off-Bias
Dose Rate
   -Typically Survives 3E9 RAD (Si)/s at 80% BV_DSs
-Typically Survives 2E12 if Current Limited to I_ASPhoto Current
-3.0nA Per-RAD (Si)/s Typically
Neutron
-Maintain Pre-RAD Specifcations
   for 1E13 Neutrons/cm² -Usable to 1E14 Neutrons/cm²

Specifications

Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DS
Drain to Gate Voltage (R_GS = 20k . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..V_DGRContinuous Drain Current
T_C = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..I_D
T_C = 100 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_D
Pulsed Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .   . .I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . .V_GSMaximum Power Dissipation
T_C = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .... .P_T
T_C = 100 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .P_T
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100H (See Test Figure). . . . . . . . . . . . . . . .I_AS
Continuous Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..... .I_SPulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_SMOperating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_J , T_STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_L(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical)

Description

The Discrete Products Operation of Intersil FSS923A0R has developed a series of Radiation Hardened MOSFETs specifcally designed for commercial and military space applications. EnhancedPowerMOSFETimmunitytoSingleEventEffects (SEE), Single Event Gate Rupture (SEGR) in particular, is combinedwith100KRADSoftotaldosehardnesstoprovide devices, FSS923A0R is ideally suited to harsh space environments.

The dose rate and neutron tolerance necessary FSS923A0R for military applications have not been sacriiced. The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available.

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