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FSS9230D

Features: 4A, 200V, rDS(ON)= 1.60UIS RatedTotal Dose -Meets Pre-RAD Specifcations to 100K RAD (Si) -Rated to 300K RAD (Si)Single Event -Safe Operating Area Curve for Single Event Effe -SEE Immunity for LET of 36MeV/mg/cm2with VDSup to 100% of Rated Breakdown and VGSof 10V Off-BiasDose Rate -Typica...

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FSS9230D: Features: 4A, 200V, rDS(ON)= 1.60UIS RatedTotal Dose -Meets Pre-RAD Specifcations to 100K RAD (Si) -Rated to 300K RAD (Si)Single Event -Safe Operating Area Curve for Single Event Effe -SEE Immunity ...

FSS9230D Data Sheet

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Part Number:
FSS9230D
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

4A, 200V, rDS(ON)= 1.60
UIS Rated
Total Dose
   -Meets Pre-RAD Specifcations to 100K RAD (Si)
   -Rated to 300K RAD (Si)
Single Event
   -Safe Operating Area Curve for Single Event Effe
   -SEE Immunity for LET of 36MeV/mg/cm2 with
   VDS up to 100% of Rated Breakdown and
   VGSof 10V Off-Bias
Dose Rate
   -Typically Survives 3E9 RAD (Si)/s at 80% BVDSs
  -Typically Survives 2E12 if Current Limited to IAS
Photo Current
  -3.0nA Per-RAD (Si)/s Typically
Neutron
  -Maintain Pre-RAD Specifcations
   for 1E13 Neutrons/cm2
  -Usable to 1E14 Neutrons/cm2
  


Specifications

Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS  = 20k . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..VDGR
Continuous Drain Current
TC  = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . ..I D
TC  = 100 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . .ID
Pulsed Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .   . .IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . .  .VGS
Maximum Power Dissipation
TC  = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .... .PT
TC  = 100 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .PT
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100H (See Test Figure). . . . . . . . . . . . . . . .IAS
Continuous Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..... .IS
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . . .ISM
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . .TJ , TSTG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . .  .TL
(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical)  


Description

The Discrete Products Operation of Intersil Corporation FSS9230D has developed a series of Radiation Hardened MOSFETs specif- ically designed for commercial and military space applica- tions. Enhanced Power MOSFET FSS9230D immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particu- lar, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space envi- ronments.

The dose rate and neutron tolerance necessary FSS9230D for military applications have not been sacrifced. The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available.




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