Features: • 55A, 200V, rDS(ON) = 0.032• UIS Rated• Total Dose- Meets Pre-RAD Specifications to 100K RAD (Si)- Rated to 300K RAD (Si)• Single Event- Safe Operating Area Curve for Single Event Effects- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 100% of Rated Breakdow...
FSPJ260R: Features: • 55A, 200V, rDS(ON) = 0.032• UIS Rated• Total Dose- Meets Pre-RAD Specifications to 100K RAD (Si)- Rated to 300K RAD (Si)• Single Event- Safe Operating Area Curve ...
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Drain to Source Voltage | VDS | 200 | V |
Drain to Gate Voltage (RGS = 20W) | VDGR | 200 | V |
Continuous Drain Current TC = 25oC |
ID | 55 | A |
TC = 100oC. | ID | 35 | A |
Pulsed Drain Current | IDM | 200 | A |
Pulsed Drain Current | VGS | ±30 | V |
Maximum Power Dissipation TC = 25oC |
PT | 192 | W |
TC = 100oC | PT | 77 | W |
Linear Derating Factor | 1.54 | W/oC | |
Single Pulsed Avalanche Current, L = 100mH, (See Test Figure) | IAS | 110 | A |
Continuous Source Current (Body Diode) | IS | 55 | A |
Pulsed Source Current (Body Diode) | ISM | 200 | A |
Operating and Storage Temperature | TJ, TSTG | -55 to 150 | |
Lead Temperature (During Soldering) | TL | 300 | |
(Distance >0.063in (1.6mm) from Case, 10s Max) Weight (Typical) |
9.3 (Typical) | g |